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rf & protection devices preliminary data sheet revision 2.0, 2012-09-19 BGT24MTR12 silicon germanium 24 ghz transceiver mmic www.datasheet.net/ datasheet pdf - http://www..co.kr/
edition 2012-09-19 published by infineon technologies ag 81726 munich, germany ? 2012 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic preliminary data sheet 3 revision 2.0, 2012-09-19 trademarks of infineon technologies ag aurix?, c166?, canpak?, ci pos?, cipurse?, econopac k?, coolmos?, coolset?, corecontrol?, crossave?, dave?, easypim?, econobridge?, econ odual?, econopim?, eicedriver?, eupec?, fcos?, hitfet?, hybridpack?, i2rf?, isoface?, isopack?, mipaq?, modstack?, my-d?, novalithic?, optimos?, or iga?, primarion?, prim epack?, primestack?, pro-sil?, profet?, rasic?, reversave?, satric?, sieget?, sindrion?, sipmos?, smartlewis?, solid flash?, tempfe t?, thinq!?, trench stop?, tricore?. other trademarks advance design system? (ads) of agilent te chnologies, amba?, arm?, multi-ice?, keil?, primecell?, realview?, thumb?, vision? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus?, firstgps? of trimble navigation ltd. emv? of emvc o, llc (visa holdings in c.). epcos? of epcos ag. flexgo? of microsoft corp oration. flexray? is licensed by flexray consortium. hyperterminal? of hilgraeve incorporated. iec? of commission electrot echnique internationale. irda? of infrared data association corporation. iso? of international organization for standardization. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. microtec?, nucleus? of mentor graphics corporation. mifare? of nx p. mipi? of mipi alliance, inc. mips? of mips technologies, inc., usa. murata? of murata manufacturing co., microwave offi ce? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. open wave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of sirius sate llite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of sy mbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. t ektronix? of tektroni x inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilog?, palladium? of cadence design systems, inc. vlynq? of texas instruments inco rporated. vxworks?, wind river? of wind river systems, inc. zetex? of diodes zetex limited. last trademarks update 2011-02-24 BGT24MTR12 silicon germanium 24 ghz transceiver mmic revision history: 2012-09-19, revision 2.0 previous revision: page subjects (major cha nges since last revision) www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic table of contents preliminary data sheet 4 revision 2.0, 2012-09-19 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 list of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 list of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.3 esd integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.4 measured rf characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.4.1 power supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.4.2 tx section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.4.3 rx section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.5 temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.6 power detector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 3 application circuit and block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3.1 application circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.3 spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.4 application board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 3.5 equivalent circuit diagram of mmic interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4 physical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4.1 package footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4.2 reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.3 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 table of contents www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic list of figures preliminary data sheet 5 revision 2.0, 2012-09-19 figure 1 BGT24MTR12 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 figure 2 application circuit with chip outlin e (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 3 timing diagram of the spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 4 cross-section view of application board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 5 detail of compensation structure. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 6 application board layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 7 equivalent circuit diagram of mmic interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 figure 8 recommended footprint and stenc il layout for the vqfn32-9 package . . . . . . . . . . . . . . . . . . . 23 figure 9 reflow profile for BGT24MTR12 (vqfn3 2-9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 figure 10 marking layout vqfn32-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 figure 11 package outline (top, side and bott om view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 figure 12 tape of vqfn32-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 list of figures www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic list of tables preliminary data sheet 6 revision 2.0, 2012-09-19 table 1 absolute maximum ra tings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 3 esd integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 4 typical characteristics t a = -40 .. 105 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 5 typical characteristics t a = -40 .. 105 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 6 typical characteristics t a = -40 .. 105 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 7 typical characteristics temperature sensor t a = -40 .. 105 c, v cc = 3.3 v . . . . . . . . . . . . . . . 13 table 8 typical characteristics power detector t a = -40 .. 105 c, v cc = 3.3 v . . . . . . . . . . . . . . . . . . . 13 table 9 bill of materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 table 10 pin definition and function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 table 11 spi block data bit description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 table 12 spi timing and logic levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 table 13 truth table amux . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 list of tables www.datasheet.net/ datasheet pdf - http://www..co.kr/
product name package chip marking BGT24MTR12 vqfn32-9 t0825 BGT24MTR12 silicon germanium 24 ghz transceiver mmic BGT24MTR12 preliminary data sheet 7 revision 2.0, 2012-09-19 1 features ? 24 ghz ism band transceiver mmic with one transmitter and two receiver units ? fully integrated low phase noise vco ? switchable prescaler with 1.5 ghz and 23 khz output ? on chip power and temperature sensors ? gilbert based homodyne quadrature receiver ? single ended rf input terminal ? low noise figure nf ssb : 12 db ? high conversion gain: 26 db ? high 1 db input compression point: -12 dbm ? single supply voltage 3.3 v ? low power consumption 660 mw ? 200 ghz bipolar sige:c technology b7hf200 ? fully esd protected device ? vqfn-32-9 leadless plastic package incl. lti feature ? pb-free (rohs compliant) package description the BGT24MTR12 is a silicon germanium mmic for signal generation and re ception, operating from 24.00 to 26.00 ghz. it is based on a 24 gh z fundamental voltage controlled oscilla tor. a switchable fr equency prescaler is included with output frequencies of 1.5 ghz and 23 khz. the main rf output delivers up to 8 dbm signal power to feed an antenna. a rc polyphase filter (ppf) is us ed for lo quadrature phase generation of the homodyne quadrature downconversion mixer. output power sensors as well as a temperature sensor are implemented for monitoring purposes. the device is cont rolled via spi and is manufactured in a 0.18m sige:c technology offering a cutoff frequency of 200 ghz. the mmic is packaged in a 32 pin leadless rohs compliant vqfn package. www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic features preliminary data sheet 8 revision 2.0, 2012-09-19 figure 1 BGT24MTR12 block diagram BGT24MTR12_chip_bid.vsd spi buffer /16 tx pa /65536 3 tx power sensor temp. sensor ppf* lna ifi1 ifq1 90 0 rfin1 lo buffer mpa ifqx1 ifix1 * poly phase filter fine coarse q2 si cs clk lo power sensor amux 2 2 ana ppf* lna ifi2 ifq2 90 0 rfin2 lo buffer ifqx2 ifix2 q1 txx www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic electrical characteristics preliminary data sheet 9 revision 2.0, 2012-09-19 2 electrical characteristics 2.1 absolute maximum ratings t a = -40 c to 105 c; all voltages with respect to grou nd, positive current flowing into pin (unless otherwise specified) 1) attention: stresses exceeding the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 1) not subject to production test, specified by design table 1 absolute maximum ratings parameter symbol values unit note / test condition min. typ. max. supply voltage v cc -0.3 ? 3.6 v ? dc voltage at rf pins tx, txx, rfin1, rfin2 vdc rf ? ? 0 v mmic provides short circuit to gnd for all rf pins dc current into pins ifxi, ifxix, ifxq, ifxqx i if -6 ? 3.5 ma max. values indicate current due to short circuit to gnd and vcc respectively dc current into pin ana i ana -5 ? 0.3 ma max. values indicate current due to short circuit to gnd and vcc respectively dc current into pin q1 i q1 -8?8ma? dc current into pin q2 i q2 -2.2 ? 2.2 ma ? rf input power into pins rfin1, rfin2 p rf ??0dbm? dc voltage at pins fine, coarse v fine, v fcoarse 0?5v? total power dissipation p diss ??830mw? junction temperature t j -40 ? 150 c ? ambient temperature range t a -40 ? 105 c t a = temperature at package soldering point storage temperature range t stg -40 ? 150 c ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic electrical characteristics preliminary data sheet 10 revision 2.0, 2012-09-19 2.2 thermal resistance 2.3 esd integrity table 2 thermal resistance parameter symbol values unit note / test condition min. typ. max. junction - soldering point 1) 1) for calculation of r thjs please refer to application note thermal resistance r thjs ??40k/w? table 3 esd integrity parameter symbol values unit note / test condition min. typ. max. esd robustness rfin1, rfin2, tx, txx 1) v esd-hbm 1000 ? ? v all rf-pins esd robustness low frequency and dc pins 1) 1) according to esda/jedec joint standard for electrostati c discharge sensitivity testin g, human body model (hbm)- component level, ansi/esda/jedec js-001-2011 please note that this result is subject to - lot variations within the manufacturing process as specified by infineon - changes in the specific test setup v esd-hbm 1000 ? ? v all other pins www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic electrical characteristics preliminary data sheet 11 revision 2.0, 2012-09-19 2.4 measured rf characteristics 2.4.1 power supply 2.4.2 tx section table 4 typical characteristics t a = -40 .. 105 c parameter symbol values unit note / test condition min. typ. max. supply voltage v cc 3.135 3.3 3.465 v ? supply current i cc 170 200 230 ma max. tx output power, all prescal- ers are activated, lo and tx output buffer in high mode table 5 typical characteristics t a = -40 .. 105 c 1) parameter symbol values unit note / test condition min. typ. max. vco frequency range f vco 24.00 ? 26.00 ghz ? vco tuning voltage v fine, v fcoarse 0.5 2) ?5 3) v at tuning pins chip- internal pull-up of 60k to vcc vco tuning slope f/ v fine ? ? 1000 mhz/v ? vco tuning slope f/ v coarse ? ? 1800 mhz/v ? vco pushing f/ v cc ? ? 300 mhz/v @ f = 24 ghz vco phase noise p n ? -85 -75 dbc/hz @ 100khz offset tx/txx load impedance 4) z txload ?100? with off chip com- pensation network as proposed max. tx output power p tx 1 8 12 dbm combined output power tx ouput power adjustable range a tx 3 9 ? db adjustable via spi tx ouput power in ?off? mode p txoff ??-15dbm? q1 prescaler division ratio d q1 ?16??? q1 prescaler output power p q1 -12 -9 -6 dbm q1 loaded with 100 ohm (ac- coupled) q2 prescaler division ratio d q2 ? 1048576 ? ? ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic electrical characteristics preliminary data sheet 12 revision 2.0, 2012-09-19 2.4.3 rx section q2 prescaler max. output voltage v maxq2 vcc-0.7 ? ? v test condition: q2 loaded with high impedance probe (1 mohm,13 pf) q2 prescaler min. output voltage v minq2 ? ? 0.5 v test condition: q2 loaded with high impedance probe (1 mohm, 13 pf) q2 prescaler max. output source current i maxsource q2 2 ? ? ma test condition: q2 loaded with 50 ohm to vcc q2 prescaler max. output sink current i maxsink q2 2 ? ? ma test condition: q2 loaded with 50 ohm to vcc 1) performance based on application circuit in figure 2 on page 14 2) min. limit @ 25c = 0.8v ; min. limit @ 105c = 1.15v 3) max. limit for max. frequency of 24.25ghz = 3.1v ; max. limit for max. frequency of 24.5ghz = 3.8v 4) guaranteed by device design table 6 typical characteristics t a = -40 .. 105 c 1) parameter symbol values unit note / test condition min. typ. max. rfin frequency range f rfin 24.00 ? 26.00 ghz ? rfin port impedance 2) z rfin ?50? with off chip com- pensation network as proposed rfin vswr vswr ? ? 2:1 ? with off chip com- pensation network as proposed if frequency range f if 0?1mhz? if port impedance 2) z if ?800? differential voltage conversion gain g c 18 26 33 db r load,if >10 k ssb noise figure n ssb ? 12 20 db single sideband at f if = 100 khz if 1/f corner frequency f c ?1020khz? input compression point ip 1db -18 -12 ? dbm ? input 3rd order intercept point iip3 -8 -4 ? dbm ? quadrat. phase imbalance p ? ? 10 deg ? quadrat. amplitude imbalance a ??1db? table 5 typical characteristics t a = -40 .. 105 c 1) (cont?d) parameter symbol values unit note / test condition min. typ. max. www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic electrical characteristics preliminary data sheet 13 revision 2.0, 2012-09-19 2.5 temperature sensor monitoring of the chip temperature is provided by t he on-chip temperature sensor which delivers temperature- proportional voltage. 2.6 power detector for power indication, peak voltage detectors are connected to the output of the tx power amplifier and to the lo medium power amplifier. to eliminate temperature a nd supply voltage variations, a reference output v ref is available through the ana output for the tx and lo po wer sensor. the compensated detector output voltage is given by the difference between v out and v ref for both power sensor respective ly. this voltage is proportional to the rf voltage swing at the individual amplifier outputs, its characterist ic is non-directional. 1) performance based on application circuit in figure 2 on page 14 2) guaranteed by device design table 7 typical characteristics temperature sensor t a = -40 .. 105 c, v cc = 3.3 v 1) 1) all voltages with respect to ground, positive curr ent flowing into pin (unless otherwise specified) parameter symbol values unit note / test condition min. typ. max. temperature range t tsens -40 ? 105 c ? output temperature voltage v out,temp ? 1.55 ? v @ 25c sensitivity s tsens 34?mv/k? table 8 typical characteristics power detector t a =-40 .. 105c, v cc =3.3v 1) 1) all voltages with respect to ground, positive curr ent flowing into pin (unless otherwise specified) parameter symbol values unit note / test condition min. typ. max. power range p psens -10 ? 12 dbm ? tx power sensor v out,tx - v ref,tx ?500?mv@ p tx = 8 dbm lo power sensor v out,lo - v ref,lo ? 50 ? mv @ typ. internal p lo www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic application circuit and block diagram preliminary data sheet 14 revision 2.0, 2012-09-19 3 application circuit and block diagram 3.1 application ci rcuit schematic figure 2 application circuit with chip outline (top view) BGT24MTR12_appl_bid.vsd q1 vee txx tx vee si clk cs q2 vee vee fine coarse vcc*** rfin2 vee if2ix if2i if2q if2qx vee 12 34 5 6 10 89 7 15 12 13 14 17 18 16 11 19 20 29 26 28 27 25 24 23 22 21 30 31 32 r1* 100 c1* 1f r2* 100 c2* 1f * rc-time constants to be defined according to modulation requirements. c3 1f c4 470f test pin** **connect pin 16 to pin 17 ana test pin** vcc*** vee rfin1 vee if1ix if1i if1q if1qx ***galvanic connection of vcc pins on silicon www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic application circuit and block diagram preliminary data sheet 15 revision 2.0, 2012-09-19 table 9 bill of materials part number part type manufacturer size comment c1 ... c4 chip capacitor various various ? r1 ... r2 chip resistor various 0402 ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic application circuit and block diagram preliminary data sheet 16 revision 2.0, 2012-09-19 3.2 pin description table 10 pin definition and function pin no. name function 1 vcc supply voltage 2 vee ground 3 rfin1 rf input downconverter 1 4 vee ground 5 fine vco fine tuning input 6 coarse vco coarse tuning input 7 vee ground 8 rfin2 rf input downconverter 2 9 vee ground 10 vcc supply voltage 11 vee ground 12 if2qx complementary quadrature phase if output downconverter 2 13 if2q quadrature phase if output downconverter 2 14 if2i in phase if output downconverter 2 15 if2ix complementary in phase if output downconverter 2 16 test pin test pin; dc coupled pin 17 test pin test pin; dc coupled pin 18 cs chip select inpu t spi (inverted) 19 clk clock input spi block 20 si data input spi block 21 vee ground 22 tx transmit output 23 txx complementary transmit output 24 vee ground 25 ana analog output 26 q1 prescaler output 1.5ghz 27 q2 prescaler output 23khz 28 if1ix complementary in phase if output downconverter 1 29 if1i in phase if output downconverter 1 30 if1q quadrature phase if output downconverter 1 31 if1qx complementary quadrature phase if output downconverter 1 32 vee ground www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic application circuit and block diagram preliminary data sheet 17 revision 2.0, 2012-09-19 3.3 spi communication to the transceiver is done via a serial-per ipheral-interface (spi). the 16 bit spi has a hardwired power-on reset, whic h sets the output bits to a defined state after turning on the supply voltage. data transmission is started by a negative edge on cs . data at si is then read at the fallin g edge of clk. the most significant bit (msb) is read first. table 11 spi block da ta bit description data bit name description (logic high) power on state 15 gs lna gain reduction low 14 ? not used low 13 amux2 analog multiplexer control bit 2 high 12 dis_pa disable power amplifier high 11 test bit test bit, must be low otherwise malfunction low 10 test bit test bit, must be low otherwise malfunction low 9 test bit test bit, must be low otherwise malfunction low 8 amux1 analog multiplexer control bit 1 low 7 amux0 analog multiplexer control bit 0 low 6 dis_div64k disable 64k divider low 5 dis_div16 disable 16 divider low 4 pc2_buf high lo buffer output power low 3 pc1_buf high tx buffer output power low 2 pc2_pa tx power reduction bit 2 high 1 pc1_pa tx power reduction bit 1 high 0 pc0_pa tx power reduction bit 0 high www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic application circuit and block diagram preliminary data sheet 18 revision 2.0, 2012-09-19 figure 3 timing diagram of the spi BGT24MTR12_spi.vsd www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic application circuit and block diagram preliminary data sheet 19 revision 2.0, 2012-09-19 table 12 spi timing and logic levels parameter symbol values unit min. typ. max. serial clock frequency f sclk 0?50mhz serial clock high time f sclk(h) 10 ? ? ns serial clock low time t sclk(l) 10 ? ? ns chip select lead time t cs(lead) 20 ? ? ns chip select lag time t cs(lag) 20 ? ? ns data setup time t si(su) 10 ? ? ns data hold time t si(h) 10 ? ? ns low level (si, clk, cs ) v in(l) 0?0.8v high level (si, clk, cs ) v in(h) 2.0 ? v cc + 0.3v v input current i in -150 ? 150 a table 13 truth table amux output signal ana amux2 amux1 amux0 p out,tx low low low p ref,tx low low high p out,lo low high low p ref,lo low high high v temp high low low test_signal1 high low high test_signal2 high high low test_signal2 high high high www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic application circuit and block diagram preliminary data sheet 20 revision 2.0, 2012-09-19 3.4 application board figure 4 cross-section view of application board figure 5 detail of compensation structure copper 35um blind-vias vias ro4350b, 0.254mm fr4, 0.5mm BGT24MTR12_cross_section_view.vsd fr4, 0.25mm BGT24MTR12_vqfn32-9-cs.vsd single-ended rfin 0.30 0.55 1.60 1.15 differential tx 0.50 0.30 1.10 0.50 1.65 0.55 www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic application circuit and block diagram preliminary data sheet 21 revision 2.0, 2012-09-19 figure 6 application board layout note: in order to achieve the same performance as given in this datasheet please follow the suggested pcb-layout as closely as possible. the comp ensation structure is critical for rf performance. via holes as recommended on next page (not shown above). top layer (top view) BGT24MTR12_app_board_layout.vsd mid1 and bottom layer (top view) mid2 layer (top view) www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic application circuit and block diagram preliminary data sheet 22 revision 2.0, 2012-09-19 3.5 equivalent circuit diag ram of mmic interfaces figure 7 equivalent circuit diagram of mmic interfaces BGT24MTR12_esb.vsd pin 3 , 8 , 22 , 23 q2 vee vcc pin 5 , 6 120 120 fine, coarse vee vcc pin 12 , 13 , 14 , 15 , 28 , 29 , 30 , 31 60k 300 rfin1, rfin2, tx, txx vee ifx vee vcc 400 cs, clk, si vee vcc pin 18 , 19 , 20 54k ana vee vcc pin 25 1500 40 pin 26 100 q1 vee vcc pin 27 50 www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic physical characteristics preliminary data sheet 23 revision 2.0, 2012-09-19 4 physical characteristics 4.1 package footprint figure 8 recommended footprint and stencil layout for the vqfn32-9 package BGT24MTR12_vqfn32-9-fp.vsd 0.3 0.85 0.3 2.9 3.3 3.9 4.3 1.0 2.2 3.2 0.1 0.2 copper solder mask vias pastefree area 0.7 0.1 pin 1 0.5 0.1 0.1 0.15 0.15 0.15 0.2 www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic physical characteristics preliminary data sheet 24 revision 2.0, 2012-09-19 4.2 reflow profile soldering process qualified during qualification with ?pre conditioning msl-3: 30c. 60%r.h., 192h, according to jedec jstd20?. figure 9 reflow profile for BGT24MTR12 (vqfn32-9) BGT24MTR12_reflow_profile.vsd www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic physical characteristics preliminary data sheet 25 revision 2.0, 2012-09-19 4.3 package dimensions figure 10 marking layout vqfn32-9 figure 11 package outline (top, side and bottom view) BGT24MTR12_vqfn32-9_ml.vsd BGT24MTR12_vqfn32-9-po.vsd www.datasheet.net/ datasheet pdf - http://www..co.kr/
BGT24MTR12 silicon germanium 24 ghz transceiver mmic physical characteristics preliminary data sheet 26 revision 2.0, 2012-09-19 figure 12 tape of vqfn32-9 BGT24MTR12_vqfn32-9_marking.vsd www.datasheet.net/ datasheet pdf - http://www..co.kr/
published by infineon technologies ag www.infineon.com www.datasheet.net/ datasheet pdf - http://www..co.kr/

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